AGM065N10F
AGM065N10F
ПроизводительAGM-Semi
Партномер производителяAGM065N10F
ОписаниеTransistors/Thyristors AGM-Semi AGM065N10F
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | AGM-Semi |
| Вес | 2.834 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 100A |
| Input Capacitance (Ciss@Vds) | 1.99nF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 128W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.2mΩ@10V,15A |
| Total Gate Charge (Qg@Vgs) | 39.5nC@10V |