AGM12T12D
AGM12T12D
ПроизводительAGM-Semi
Партномер производителяAGM12T12D
ОписаниеTransistors/Thyristors AGM-Semi AGM12T12D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | AGM-Semi |
| Вес | 0.362 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 60A |
| Input Capacitance (Ciss@Vds) | 2.232nF@50V |
| Drain Source Voltage (Vdss) | 120V |
| Power Dissipation (Pd) | 33W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.7V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 40nC@10V |