AGM150P10D
AGM150P10D
ПроизводительAGM-Semi
Партномер производителяAGM150P10D
ОписаниеTransistors/Thyristors AGM-Semi AGM150P10D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | AGM-Semi |
| Вес | 0.36 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 18A |
| Input Capacitance (Ciss@Vds) | 700pF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 69W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 112mΩ@10V,5A |
| Total Gate Charge (Qg@Vgs) | 13nC@10V |