AGM18N10C
AGM18N10C
ПроизводительAGM-Semi
Партномер производителяAGM18N10C
ОписаниеTransistors/Thyristors AGM-Semi AGM18N10C
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | AGM-Semi |
| Вес | 2.823 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 45A |
| Input Capacitance (Ciss@Vds) | 800pF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 45W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.7V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 17.5mΩ@10V,15A |
| Total Gate Charge (Qg@Vgs) | 22.5nC@10V |