AGM314MD
AGM314MD
ПроизводительAGM-Semi
Партномер производителяAGM314MD
ОписаниеTransistors/Thyristors AGM-Semi AGM314MD
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | AGM-Semi |
| Вес | 0.378 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel + 1 P-Channel |
| Continuous Drain Current (Id) | 30A;20A |
| Input Capacitance (Ciss@Vds) | 618pF@15V;689pF@15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 29.7W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA;1.5V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.5mΩ@10V,10A;21mΩ@10V,10A |
| Total Gate Charge (Qg@Vgs) | 11.7nC@10V;13.2nC@10V |