AGM55P10C
AGM55P10C
ПроизводительAGM-Semi
Партномер производителяAGM55P10C
ОписаниеTransistors/Thyristors AGM-Semi AGM55P10C
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | AGM-Semi |
| Вес | 2.753 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 38A |
| Input Capacitance (Ciss@Vds) | 4.507nF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 50W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 52mΩ@10V,10A |
| Total Gate Charge (Qg@Vgs) | 773nC@10V |