DWY9R820H
DWY9R820H
ПроизводительDELTAMOS
Партномер производителяDWY9R820H
ОписаниеTransistors/Thyristors DELTAMOS DWY9R820H
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | DELTAMOS |
| Вес | 1.745 |
| Operating Temperature | -50℃~+150℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 110A |
| Input Capacitance (Ciss@Vds) | 5014pF@100V |
| Drain Source Voltage (Vdss) | 200V |
| Power Dissipation (Pd) | 750W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.3mΩ@10V,30A |
| Total Gate Charge (Qg@Vgs) | 76.9nC@10V |