GBS65041CTOB
GBS65041CTOB
ПроизводительGOSEMICON
Партномер производителяGBS65041CTOB
ОписаниеTransistors/Thyristors GOSEMICON GBS65041CTOB
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | GOSEMICON |
| Вес | 1 |
| Type | N-Channel |
| configuration | - |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF@400V |
| Pd- Power Dissipation | 450W |
| RDS(on) | 40mΩ@10V |
| Drain to Source Voltage | 650V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 54A |
| Gate Threshold Voltage (Vgs(th)) | 4V@1mA |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 130nC@10V |