GBS65060TOA
GBS65060TOA
ПроизводительGOSEMICON
Партномер производителяGBS65060TOA
ОписаниеTransistors/Thyristors GOSEMICON GBS65060TOA
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | GOSEMICON |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Continuous Drain Current (Id) | 23A |
| Input Capacitance (Ciss@Vds) | 4.3nF |
| Drain Source Voltage (Vdss) | 650V |
| Power Dissipation (Pd) | 192W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.6V@1mA |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@10V,16.4A |
| Total Gate Charge (Qg@Vgs) | 95nC |
| Pd- Power Dissipation | 329W |
| RDS(on) | 55mΩ@10V |
| Drain to Source Voltage | 650V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 50A |
| Gate Threshold Voltage (Vgs(th)) | 4V@1mA |
| Input Capacitance(Ciss) | 4.3nF |
| Output Capacitance(Coss) | 70pF |
| Gate Charge(Qg) | 90nC |