DHS052N10E
DHS052N10E
ПроизводительWXDH
Партномер производителяDHS052N10E
ОписаниеTransistors/Thyristors WXDH DHS052N10E
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | WXDH |
| Вес | 1.681 |
| Operating Temperature | -55℃~+175℃ |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 110A |
| Input Capacitance (Ciss@Vds) | 5384pF@30V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 190W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF@30V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.1mΩ@10V,70A |
| Total Gate Charge (Qg@Vgs) | 74nC@10V |