MSB100N023
MSB100N023
ПроизводительBruckewell
Партномер производителяMSB100N023
ОписаниеTransistors/Thyristors Bruckewell MSB100N023
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Bruckewell |
| Вес | 1.7 |
| Operating Temperature | -55℃~+150℃ |
| Type | 1 N-Channel |
| configuration | - |
| Continuous Drain Current (Id) | 250A |
| Input Capacitance (Ciss@Vds) | 10100pF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 278W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250μA |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.9mΩ@10V,40A |
| Total Gate Charge (Qg@Vgs) | 192nC@10V |