MSH60N35D
MSH60N35D
ПроизводительBruckewell
Партномер производителяMSH60N35D
ОписаниеTransistors/Thyristors Bruckewell MSH60N35D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Bruckewell |
| Вес | 0.156 |
| Operating Temperature | -55℃~+150℃ |
| Type | 2 N-Channel |
| configuration | - |
| Continuous Drain Current (Id) | 35A |
| Input Capacitance (Ciss@Vds) | 2.423nF@15V |
| Drain Source Voltage (Vdss) | 60V |
| Power Dissipation (Pd) | 45W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250μA |
| Reverse Transfer Capacitance (Crss@Vds) | 97pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 19.3nC@4.5V |