MSQ100N03D
MSQ100N03D
ПроизводительBruckewell
Партномер производителяMSQ100N03D
ОписаниеTransistors/Thyristors Bruckewell MSQ100N03D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Bruckewell |
| Вес | 0.146 |
| Operating Temperature | -55℃~+150℃ |
| Continuous Drain Current (Id) | 2.3A |
| Input Capacitance (Ciss@Vds) | 1.021nF@25V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF@25V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 152mΩ@10V,2A |
| Total Gate Charge (Qg@Vgs) | 19nC@10V |