MSQ30P40D
MSQ30P40D
ПроизводительBruckewell
Партномер производителяMSQ30P40D
ОписаниеTransistors/Thyristors Bruckewell MSQ30P40D
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Bruckewell |
| Вес | 0.14 |
| Operating Temperature | -55℃~+150℃ |
| Type | 2 P-Channel |
| configuration | - |
| Continuous Drain Current (Id) | 6A |
| Input Capacitance (Ciss@Vds) | 1.22nF@15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 2.2W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250μA |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 30mΩ@10V,6A |
| Total Gate Charge (Qg@Vgs) | 11.4nC@4.5V |