E100N4P0HL1
E100N4P0HL1
ПроизводительExistar
Партномер производителяE100N4P0HL1
ОписаниеTransistors/Thyristors Existar E100N4P0HL1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Existar |
| Вес | 0.214 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Continuous Drain Current (Id) | 83A |
| Input Capacitance (Ciss@Vds) | 3841pF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 52W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 34.4pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4mΩ@10V,20A |
| Total Gate Charge (Qg@Vgs) | 74.2nC@10V |
| Pd- Power Dissipation | 52W |
| RDS(on) | 4mΩ@10V |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 83A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Input Capacitance(Ciss) | 3.841nF@50V |
| Gate Charge(Qg) | 74.2nC@10V |