E40P100KC
E40P100KC
ПроизводительExistar
Партномер производителяE40P100KC
ОписаниеTransistors/Thyristors Existar E40P100KC
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Existar |
| Вес | 0.464 |
| Operating Temperature | -55℃~+150℃ |
| Type | P-Channel |
| Continuous Drain Current (Id) | 40A |
| Input Capacitance (Ciss@Vds) | 2.3nF@25V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 102W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 45mΩ@10V,15A |
| Total Gate Charge (Qg@Vgs) | 98nC@10V |
| Pd- Power Dissipation | 102W |
| RDS(on) | 45mΩ@10V |
| Drain to Source Voltage | 100V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Input Capacitance(Ciss) | 2.3nF |
| Output Capacitance(Coss) | 220pF |
| Gate Charge(Qg) | 98nC@10V |