ME80N75T
ME80N75T
ПроизводительMATSUKI
Партномер производителяME80N75T
ОписаниеTransistors/Thyristors MATSUKI ME80N75T
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | MATSUKI |
| Вес | 2.32 |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 93A |
| Input Capacitance (Ciss@Vds) | 6.2nF@20V |
| Drain Source Voltage (Vdss) | 75V |
| Power Dissipation (Pd) | 200W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 144pF@20V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8mΩ@10V,40A |
| Total Gate Charge (Qg@Vgs) | 27nC@4.5V |