MEE15N10-G
MEE15N10-G
ПроизводительMATSUKI
Партномер производителяMEE15N10-G
ОписаниеTransistors/Thyristors MATSUKI MEE15N10-G
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | MATSUKI |
| Вес | 0.4 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | 1 N-Channel |
| Continuous Drain Current (Id) | 15.4A |
| Input Capacitance (Ciss@Vds) | 314pF@15V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 37.9W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@10V,8A |
| Total Gate Charge (Qg@Vgs) | 15.5nC@10V |