MEE4294-G
MEE4294-G
ПроизводительMATSUKI
Партномер производителяMEE4294-G
ОписаниеTransistors/Thyristors MATSUKI MEE4294-G
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | MATSUKI |
| Вес | 0.08 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Continuous Drain Current (Id) | 11.3A |
| Input Capacitance (Ciss@Vds) | 2071pF |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 2.8W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12mΩ@10V |
| Total Gate Charge (Qg@Vgs) | - |
| Pd- Power Dissipation | 2.8W |
| RDS(on) | 15.5mΩ@4.5V |
| Drain to Source Voltage | 100V |
| Number | - |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 11.3A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Input Capacitance(Ciss) | 2.071nF |
| Gate Charge(Qg) | - |