RU8205G
RU8205G
ПроизводительShenzhen ruichips Semicon
Партномер производителяRU8205G
ОписаниеTransistors/Thyristors Shenzhen ruichips Semicon RU8205G
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Shenzhen ruichips Semicon |
| Вес | 0.104 |
| Operating Temperature | - |
| Type | 2 N-Channel |
| configuration | Common Drain |
| Continuous Drain Current (Id) | 6A |
| Input Capacitance (Ciss@Vds) | 580pF@10V |
| Drain Source Voltage (Vdss) | 20V |
| Power Dissipation (Pd) | 1.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 700mV@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF@10V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 21mΩ@4.5V,6A |
| Total Gate Charge (Qg@Vgs) | 10nC@4.5V |