RUH1H80M
RUH1H80M
ПроизводительShenzhen ruichips Semicon
Партномер производителяRUH1H80M
ОписаниеTransistors/Thyristors Shenzhen ruichips Semicon RUH1H80M
Характеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Shenzhen ruichips Semicon |
| Вес | 0.17 |
| Operating Temperature | -55℃~+150℃ |
| Continuous Drain Current (Id) | 80A |
| Input Capacitance (Ciss@Vds) | 1.85nF@50V |
| Drain Source Voltage (Vdss) | 100V |
| Power Dissipation (Pd) | 105W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6mΩ@10V,50A |
| Total Gate Charge (Qg@Vgs) | 64nC@10V |