3DD13009K-O-C-N-B
3DD13009K-O-C-N-B
ПроизводительJilin Sino-Microelectronics
Партномер производителя3DD13009K-O-C-N-B
ОписаниеTransistors/Thyristors Jilin Sino-Microelectronics 3DD13009K-O-C-N-B
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | Jilin Sino-Microelectronics |
| Вес | 3.06 |
| Operating Temperature | - |
| Power Dissipation (Pd) | 100W |
| Transistor Type | NPN |
| DC Current Gain (hFE@Ic,Vce) | 8@5A,5V |
| Collector Current (Ic) | 12A |
| Collector-Emitter Breakdown Voltage (Vceo) | 400V |
| Transition frequency (fT) | 4MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 1.8V@8A,1.6A |
| Collector Cut-Off Current (Icbo) | 100uA |