3DD4242DM-126
3DD4242DM-126
ПроизводительJilin Sino-Microelectronics
Партномер производителя3DD4242DM-126
ОписаниеTransistors/Thyristors Jilin Sino-Microelectronics 3DD4242DM-126
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | Jilin Sino-Microelectronics |
| Вес | 0.817 |
| Operating Temperature | - |
| Type | NPN |
| Power Dissipation (Pd) | 20W |
| Transistor Type | NPN |
| DC Current Gain (hFE@Ic,Vce) | 22@100mA,10V |
| Collector Current (Ic) | 1.5A |
| Collector-Emitter Breakdown Voltage (Vceo) | 400V |
| Transition frequency (fT) | 4MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 200mV@500mA,100mA |
| Collector-emitter voltage (Vceo) | 400V |
| Collector Cut-Off Current (Icbo) | 5uA |
| Pd- Power Dissipation | 20W |
| Current - Collector(Ic) | 1.5A |
| Emitter-Base Voltage(Vebo) | 9V |
| Current - Collector Cutoff | 5uA |
| Transition frequency(fT) | 4MHz |