SEBC847BU
SEBC847BU
ПроизводительSINO-IC
Партномер производителяSEBC847BU
ОписаниеTransistors/Thyristors SINO-IC SEBC847BU
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | SINO-IC |
| Вес | 0.032 |
| Operating Temperature | - |
| Power Dissipation (Pd) | 350mW |
| Transistor Type | NPN |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Transition frequency (fT) | 200MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 600mV@100mA,5mA |
| Collector Cut-Off Current (Icbo) | 15nA |