SEBT8050
SEBT8050
ПроизводительSINO-IC
Партномер производителяSEBT8050
ОписаниеTransistors/Thyristors SINO-IC SEBT8050
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | SINO-IC |
| Вес | 0.033 |
| Operating Temperature | - |
| Type | PNP |
| Power Dissipation (Pd) | 625mW |
| Transistor Type | NPN |
| DC Current Gain (hFE@Ic,Vce) | 100@50mA,1V |
| Collector Current (Ic) | 1.5A |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Transition frequency (fT) | 120MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 500mV@500mA,20mA |
| Collector-emitter voltage (Vceo) | 30V |
| Collector Cut-Off Current (Icbo) | 50nA |
| Pd- Power Dissipation | 625mW |
| Current - Collector(Ic) | 1.5A |
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| Transition frequency(fT) | 120MHz |