SEBT818BA
SEBT818BA
ПроизводительSINO-IC
Партномер производителяSEBT818BA
ОписаниеTransistors/Thyristors SINO-IC SEBT818BA
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | SINO-IC |
| Вес | 0.04 |
| Operating Temperature | - |
| Type | PNP |
| Power Dissipation (Pd) | 1.2W |
| Transistor Type | PNP |
| DC Current Gain (hFE@Ic,Vce) | 100@500mA,1V |
| Collector Current (Ic) | 3A |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Transition frequency (fT) | - |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 210mV@2A,20mA |
| Collector-emitter voltage (Vceo) | 30V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Pd- Power Dissipation | 1.2W |
| Current - Collector(Ic) | 3A |
| Number | 1 PNP |
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 20uA |
| Transition frequency(fT) | - |