KBT5551C

KBT5551C

ПроизводительKodenshi AUK
Партномер производителяKBT5551C
ОписаниеTransistors/Thyristors Kodenshi AUK KBT5551C

Характеристики

ПараметрЗначение
КатегорияБиполярные (BJT)
ПроизводительKodenshi AUK
Вес0.031
Operating Temperature-
Power Dissipation (Pd)200mW
Transistor TypeNPN
DC Current Gain (hFE@Ic,Vce)80@10mA,5V
Collector Current (Ic)600mA
Collector-Emitter Breakdown Voltage (Vceo)160V
Transition frequency (fT)100MHz
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)500mV@50mA,5mA
Collector Cut-Off Current (Icbo)50nA