S8550/2TY/0.4
S8550/2TY/0.4
ПроизводительMOT
Партномер производителяS8550/2TY/0.4
ОписаниеTransistors/Thyristors MOT S8550/2TY/0.4
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | MOT |
| Вес | 0.029 |
| Operating Temperature | -55℃~+150℃ |
| Type | PNP |
| Power Dissipation (Pd) | 300mW |
| Transistor Type | PNP |
| DC Current Gain (hFE@Ic,Vce) | 400@50mA,1V |
| Collector Current (Ic) | 500mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V |
| Transition frequency (fT) | 150MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 600mV@500mA,50mA |
| Collector-emitter voltage (Vceo) | 25V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Pd- Power Dissipation | 300mW |
| Current - Collector(Ic) | 500mA |
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Transition frequency(fT) | 150MHz |