SS8550/Y2
SS8550/Y2
ПроизводительMOT
Партномер производителяSS8550/Y2
ОписаниеTransistors/Thyristors MOT SS8550/Y2
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | MOT |
| Вес | 0.03 |
| Operating Temperature | -55℃~+150℃ |
| Type | PNP |
| Power Dissipation (Pd) | 300mW |
| Transistor Type | PNP |
| DC Current Gain (hFE@Ic,Vce) | 200@1mA,10V |
| Collector Current (Ic) | 1.5A |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V |
| Transition frequency (fT) | 100MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 500mV@50mA,10mA |
| Collector-emitter voltage (Vceo) | 25V |
| Collector Cut-Off Current (Icbo) | 50uA |
| Pd- Power Dissipation | 300mW |
| Current - Collector(Ic) | 1.5A |
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50uA |
| Transition frequency(fT) | 100MHz |