MMBT3906
MMBT3906
ПроизводительSINEDEVICE
Партномер производителяMMBT3906
ОписаниеTransistors/Thyristors SINEDEVICE MMBT3906
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | SINEDEVICE |
| Вес | 0.031 |
| Power Dissipation (Pd) | 200mW |
| Transistor Type | PNP |
| DC Current Gain (hFE@Ic,Vce) | 300@10mA,1V |
| Collector Current (Ic) | 200mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Transition frequency (fT) | 300MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 300mV@50mA,5mA |
| Collector Cut-Off Current (Icbo) | 50nA |