MMBT5551
MMBT5551
ПроизводительSINEDEVICE
Партномер производителяMMBT5551
ОписаниеTransistors/Thyristors SINEDEVICE MMBT5551
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | SINEDEVICE |
| Вес | 0.029 |
| Type | NPN |
| Power Dissipation (Pd) | 300mW |
| Transistor Type | NPN |
| DC Current Gain (hFE@Ic,Vce) | 300@10mA,5V |
| Collector Current (Ic) | 600mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 160V |
| Transition frequency (fT) | 300MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 200mV@50mA,5mA |
| Collector-emitter voltage (Vceo) | 160V |
| Collector Cut-Off Current (Icbo) | 50nA |
| Pd- Power Dissipation | 300mW |
| Current - Collector(Ic) | 600mA |
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Transition frequency(fT) | 300MHz |