MMBTA42
MMBTA42
ПроизводительSINEDEVICE
Партномер производителяMMBTA42
ОписаниеTransistors/Thyristors SINEDEVICE MMBTA42
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | SINEDEVICE |
| Вес | 0.033 |
| Power Dissipation (Pd) | 350mW |
| Transistor Type | NPN |
| DC Current Gain (hFE@Ic,Vce) | 200@10mA,10V |
| Collector Current (Ic) | 300mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 300V |
| Transition frequency (fT) | 50MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 200mV@20mA,2mA |
| Collector Cut-Off Current (Icbo) | 250nA |