SS8550
SS8550
ПроизводительSINEDEVICE
Партномер производителяSS8550
ОписаниеTransistors/Thyristors SINEDEVICE SS8550
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Биполярные (BJT) |
| Производитель | SINEDEVICE |
| Вес | 0.031 |
| Power Dissipation (Pd) | 300mW |
| Transistor Type | PNP |
| DC Current Gain (hFE@Ic,Vce) | 400@100mA,1V |
| Collector Current (Ic) | 1.5A |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V |
| Transition frequency (fT) | 100MHz |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 500mV@800mA,80mA |
| Collector Cut-Off Current (Icbo) | 100nA |