BT137-800E
BT137-800E
ПроизводительCollective Semiconductor Technology
Партномер производителяBT137-800E
ОписаниеTransistors/Thyristors Collective Semiconductor Technology BT137-800E
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Тиристоры (SCR)/модули |
| Производитель | Collective Semiconductor Technology |
| Вес | 3.04 |
| Operating Temperature | - |
| Peak Repetitive Off?State Voltage (Vdrm) | - |
| SCR Type | Two-way thyristor |
| Gate Trigger Voltage (Vgt) | - |
| Holding Current (Ih) | - |
| Peak Forward On?State Voltage (Vtm) | - |
| Average Gate Power Dissipation (PG(AV)) | - |
| RMS On-State Current(It (rms)) | - |
| Peak non-repetitive surge current (Itsm@f) | - |
| Gate Trigger Current(Igt) | - |