YGW75N65F1
YGW75N65F1
Производительluxin-semi
Партномер производителяYGW75N65F1
ОписаниеTransistors/Thyristors luxin-semi YGW75N65F1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | IGBT транзисторы / модули |
| Производитель | luxin-semi |
| Вес | 8.27 |
| Operating Temperature | -40℃~+175℃ |
| Collector Current (Ic) | 75A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.6V@250uA |
| Diode Forward Voltage (Vf@If) | 2.3V |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 500W |
| Td(off) | 660ns |
| Td(on) | 110ns |
| Reverse Transfer Capacitance (Cres) | 100pF |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 8.4mJ |
| Turn-On Energy (Eon) | 4.3mJ |
| Output Capacitance(Coes) | 200pF |
| Input Capacitance(Cies) | 4.5nF |