SPT40N120T1B1T8TL
SPT40N120T1B1T8TL
ПроизводительSPS
Партномер производителяSPT40N120T1B1T8TL
ОписаниеTransistors/Thyristors SPS SPT40N120T1B1T8TL
Характеристики
| Параметр | Значение |
|---|---|
| Категория | IGBT транзисторы / модули |
| Производитель | SPS |
| Вес | 7.966 |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 416W |
| Collector Current (Ic) | 80A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@250uA |
| Diode Forward Voltage (Vf@If) | 3.5V@40A |
| Diode Reverse Recovery Time (Trr) | 190ns |
| Turn?off Delay Time (Td(off)) | 230ns |
| Turn?off Switching Loss (Eoff) | 1.5mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.7V@40A,15V |
| Turn?on Delay Time (Td(on)) | 55ns |
| Total Gate Charge (Qg@Ic,Vge) | 270nC@40A,15V |
| Input Capacitance (Cies@Vce) | 4.4nF@25V |
| Turn?on Switching Loss (Eon) | 2.4mJ |