MMBTRC116SS
MMBTRC116SS
ПроизводительPJSEMI
Партномер производителяMMBTRC116SS
ОписаниеTransistors/Thyristors PJSEMI MMBTRC116SS
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | PJSEMI |
| Вес | 0.032 |
| Operating Temperature | - |
| Type | NPN |
| Power Dissipation (Pd) | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
| Transistor Type | - |
| Resistor Ratio | 10 |
| Output Voltage (VO(on)@Io/Ii) | 300mV@10mA,500uA |
| DC Current Gain (hFE@Ic,Vce) | 33@5mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 1kΩ |
| Input Voltage (VI(off)@Ic,Vce) | 300mV@100uA,5V |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 200mW |
| Current - Collector(Ic) | 100mA |
| Number | - |
| DC Current Gain | 33@10mA,5V |
| Voltage - Input(Max)(VI(off)) | 300mV |
| Output Voltage(VO(on)) | 300mV |