MMDTA143Z
MMDTA143Z
ПроизводительPJSEMI
Партномер производителяMMDTA143Z
ОписаниеTransistors/Thyristors PJSEMI MMDTA143Z
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | PJSEMI |
| Вес | 0.03 |
| Power Dissipation (Pd) | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
| Transistor Type | 2 PNP - pre-bias |
| Resistor Ratio | 10 |
| DC Current Gain (hFE@Ic,Vce) | 80@10mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Voltage (VI(off)@Ic,Vce) | 500mV@100uA,5V |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 200mW |
| Current - Collector(Ic) | 100mA |
| Number | 2 PNP Pre-Biased Transistors |
| DC Current Gain | 80@10mA,5V |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Output Voltage(VO(on)) | 300mV |