PDTC114YE
PDTC114YE
ПроизводительShanghai Prisemi Elec
Партномер производителяPDTC114YE
ОписаниеTransistors/Thyristors Shanghai Prisemi Elec PDTC114YE
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | Shanghai Prisemi Elec |
| Вес | 0.025 |
| Operating Temperature | - |
| Power Dissipation (Pd) | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V |
| Transistor Type | 1 NPN - bias preset |
| Resistor Ratio | 5.7 |
| Output Voltage (VO(on)@Io/Ii) | - |
| DC Current Gain (hFE@Ic,Vce) | 68@5mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | - |
| Input Resistor | 13kΩ |
| Input Voltage (VI(off)@Ic,Vce) | 300mV@100uA,5V |
| Collector-emitter voltage (Vceo) | - |
| Pd- Power Dissipation | 150mW |
| Current - Collector(Ic) | 100mA |
| Number | 1 NPN (Pre-Biased) |
| DC Current Gain | 68@5mA,5V |
| Voltage - Input(Max)(VI(off)) | 300mV@100uA,5V |
| Output Voltage(VO(on)) | 100mV |