DTC114EE
DTC114EE
ПроизводительTWGMC
Партномер производителяDTC114EE
ОписаниеTransistors/Thyristors TWGMC DTC114EE
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | TWGMC |
| Вес | 0.03 |
| Operating Temperature | -55℃~+150℃ |
| Power Dissipation (Pd) | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
| Resistor Ratio | 1.2 |
| Output Voltage (VO(on)@Io/Ii) | 300mV@10mA,0.5mA |
| DC Current Gain (hFE@Ic,Vce) | 30@5mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 13kΩ |
| Input Voltage (VI(off)@Ic,Vce) | 500mV@100uA,5V |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 200mW |
| Current - Collector(Ic) | 100mA |
| DC Current Gain | 30@5mA,5V |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Output Voltage(VO(on)) | 300mV |