TP65H050WSQA
TP65H050WSQA
ПроизводительTransphorm
Партномер производителяTP65H050WSQA
ОписаниеGallium Nitride (GaN) Devices Transphorm TP65H050WSQA
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Транзисторы GaN (GaN HEMT) |
| Производитель | Transphorm |
| Вес | 1 |
| Operating Temperature | -55℃~+175℃ |
| Power Dissipation | 150W |
| Drain-source on-state resistance | 60mΩ |
| Transistor Type | 1 N-Channel |
| Continuous Drain Current | 36A |
| Drain Source Breakdown Voltage | 650V |