MMDT5212W
MMDT5212W
ПроизводительST(Semtech)
Партномер производителяMMDT5212W
ОписаниеTransistors/Thyristors ST(Semtech) MMDT5212W
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | ST(Semtech) |
| Вес | 0.023 |
| Operating Temperature | - |
| Type | NPN |
| Power Dissipation (Pd) | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
| Transistor Type | 1 NPN - bias preset |
| Resistor Ratio | 1 |
| Output Voltage (VO(on)@Io/Ii) | - |
| DC Current Gain (hFE@Ic,Vce) | 20@10mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 22kΩ |
| Input Voltage (VI(off)@Ic,Vce) | 500mV@100uA,5V |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 200mW |
| Current - Collector(Ic) | 100mA |
| Number | 1 NPN (Pre-Biased) |
| DC Current Gain | 60@10mA,5V |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Output Voltage(VO(on)) | - |