PDTA144EE,115
PDTA144EE,115
ПроизводительPhilips Semicons
Партномер производителяPDTA144EE,115
ОписаниеTransistors/Thyristors PHILIPS PDTA144EE,115
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | Philips Semicons |
| Вес | 1 |
| Operating Temperature | -65℃~+150℃ |
| Power Dissipation (Pd) | 150mW |
| Transistor Type | 1 PNP pre-bias |
| Resistor Ratio | 1 |
| DC Current Gain (hFE@Ic,Vce) | 80@5mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 61kΩ |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 150mW |
| Current - Collector(Ic) | 100mA |
| Number | 1 PNP Pre-Biased |
| DC Current Gain | 80@5mA,5V |