DGTD65T40S2PT
DGTD65T40S2PT
ПроизводительDiodes Incorporated
Партномер производителяDGTD65T40S2PT
ОписаниеTransistors/Thyristors Diodes Incorporated DGTD65T40S2PT
Характеристики
| Параметр | Значение |
|---|---|
| Категория | IGBT транзисторы / модули |
| Производитель | Diodes Incorporated |
| Вес | 8.182 |
| Operating Temperature | - |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 230W |
| Collector Current (Ic) | 80A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,40A |
| Diode Forward Voltage (Vf@If) | 1.5V@20A |
| Diode Reverse Recovery Time (Trr) | 60ns |
| Turn?off Delay Time (Td(off)) | 55ns |
| Turn?off Switching Loss (Eoff) | 0.4mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.8V@40A,15V |
| Turn?on Delay Time (Td(on)) | 6ns |
| Total Gate Charge (Qg@Ic,Vge) | 60nC |
| Input Capacitance (Cies@Vce) | 1.565nF@25V |
| Turn?on Switching Loss (Eon) | 0.5mJ |