DGTD65T50S1PT
DGTD65T50S1PT
ПроизводительDiodes Incorporated
Партномер производителяDGTD65T50S1PT
ОписаниеTransistors/Thyristors Diodes Incorporated DGTD65T50S1PT
Характеристики
| Параметр | Значение |
|---|---|
| Категория | IGBT транзисторы / модули |
| Производитель | Diodes Incorporated |
| Вес | 8.166 |
| Operating Temperature | - |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 375W |
| Collector Current (Ic) | 100A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,50A |
| Diode Reverse Recovery Time (Trr) | 80ns |
| Turn?off Delay Time (Td(off)) | 328ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Turn?on Delay Time (Td(on)) | 58ns |
| Total Gate Charge (Qg@Ic,Vge) | 287nC |