CGU06N65F2SA
CGU06N65F2SA
ПроизводительJiangsu Changjing Electronics Technology Co., Ltd.
Партномер производителяCGU06N65F2SA
ОписаниеTransistors/Thyristors JSCJ CGU06N65F2SA
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | IGBT транзисторы / модули |
| Производитель | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Вес | 0.399 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 56W |
| Gate Charge(Qg) | 28.8nC@15V |
| Td(off) | 96.8ns |
| Td(on) | 23.1ns |
| Reverse Transfer Capacitance (Cres) | 7.68pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 110ns |
| Switching Energy(Eoff) | 68uJ |
| Turn-On Energy (Eon) | 90uJ |
| Output Capacitance(Coes) | 21.5pF |
| Pulsed Current- Forward(Ifm) | 15A |