Z0107NA/DG,116
Z0107NA/DG,116
ПроизводительWeEn Semiconductors
Партномер производителяZ0107NA/DG,116
ОписаниеTransistors/Thyristors WeEn Z0107NA/DG,116
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Тиристоры (SCR)/модули |
| Производитель | WeEn Semiconductors |
| Вес | 0.36 |
| Operating Temperature | - |
| Peak Repetitive Off?State Voltage (Vdrm) | 800V |
| SCR Type | - |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Holding Current (Ih) | 10mA |
| Average Gate Power Dissipation (PG(AV)) | 100mW |
| RMS On-State Current(It (rms)) | 1A |
| Gate Trigger Current(Igt) | 5mA |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Gate Trigger(Igt) | 5mA |
| Voltage - On State(Vtm) | 1.6V |
| Current - On State(It(RMS)) | 1A |
| Current - Surge(Itsm@f) | 8.5A |