WG50N65DHWQ
WG50N65DHWQ
ПроизводительWeEn Semiconductors
Партномер производителяWG50N65DHWQ
ОписаниеTransistors/Thyristors WeEn Semiconductors WG50N65DHWQ
Характеристики
| Параметр | Значение |
|---|---|
| Категория | IGBT транзисторы / модули |
| Производитель | WeEn Semiconductors |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 278W |
| Collector Current (Ic) | 91A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,50A |
| Diode Reverse Recovery Time (Trr) | 105ns |
| Turn?off Delay Time (Td(off)) | 163ns |
| Turn?off Switching Loss (Eoff) | 0.6mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Turn?on Delay Time (Td(on)) | 66ns |
| Total Gate Charge (Qg@Ic,Vge) | 160nC |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 1.7mJ |