MIW40N120-BP
MIW40N120-BP
ПроизводительMCC(Micro Commercial Components)
Партномер производителяMIW40N120-BP
ОписаниеTransistors/Thyristors MCC(Micro Commercial Components) MIW40N120-BP
Характеристики
| Параметр | Значение |
|---|---|
| Категория | IGBT транзисторы / модули |
| Производитель | MCC(Micro Commercial Components) |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 277W |
| Collector Current (Ic) | 80A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,40A |
| Diode Reverse Recovery Time (Trr) | 80ns |
| Turn?off Delay Time (Td(off)) | 265ns |
| Turn?off Switching Loss (Eoff) | 1.4mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Turn?on Delay Time (Td(on)) | 62ns |
| Total Gate Charge (Qg@Ic,Vge) | 239nC |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 3.3mJ |