UMH1NFHATN
UMH1NFHATN
ПроизводительROHM Semicon
Партномер производителяUMH1NFHATN
ОписаниеTransistors/Thyristors ROHM UMH1NFHATN
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Цифровые транзисторы |
| Производитель | ROHM Semicon |
| Вес | 0.025 |
| Power Dissipation (Pd) | 150mW |
| Transistor Type | 2 NPN-Pre-Biased |
| Resistor Ratio | 1 |
| DC Current Gain (hFE@Ic,Vce) | 56@5mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Input Resistor | 22kΩ |
| Collector-emitter voltage (Vceo) | 50V |
| Pd- Power Dissipation | 150mW |
| Current - Collector(Ic) | 100mA |
| Number | 2 NPN (Pre-Biased) |
| DC Current Gain | 56@5mA,5V |